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NTHS5404T1
Power MOSFET
20 V, 7.2 A, N ? Channel ChipFET E
Features
? Low R DS(on) for Higher Efficiency
? Logic Level Gate Drive
? Miniature ChipFET Surface Mount Package Saves Board Space
? Pb ? Free Package is Available
Applications
? Power Management in Portable and Battery ? Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
V (BR)DSS
20 V
http://onsemi.com
R DS(on) TYP
25 m W @ 4.5 V
D
I D MAX
7.2 A
MAXIMUM RATINGS (T A = 25 ° C unless otherwise noted)
Rating
Symbol
5 Secs
Steady
State
Unit
G
Drain ? Source Voltage
Gate ? Source Voltage
V DS
V GS
20
" 12
V
V
S
N ? Channel MOSFET
Continuous Drain Current
(T J = 150 ° C) (Note 1)
T A = 25 ° C
T A = 85 ° C
Pulsed Drain Current
I D
I DM
7.2
5.2
" 20
5.2
3.8
A
A
ChipFET
CASE 1206A
STYLE 1
Continuous Source Current
(Diode Conduction) (Note 1)
I S
7.2
5.2
A
PIN
MARKING
Maximum Power Dissipation
(Note 1)
T A = 25 ° C
T A = 85 ° C
Operating Junction and Storage
Temperature Range
P D
T J , T stg
2.5 1.3
1.3 0.7
? 55 to +150
W
° C
CONNECTIONS
D 8 1 D
D 7 2 D
D 6 3 D
1
2
3
DIAGRAM
8
7
6
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
S
5
4 G 4
A2 = Specific Device Code
M = Month Code
G = Pb ? Free Package
5
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTHS5404T1
NTHS5404T1G
Package
ChipFET
ChipFET
Shipping ?
3000/Tape & Reel
3000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2008
June, 2008 ? Rev. 5
1
Publication Order Number:
NTHS5404T1/D
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